| US 7,462,563 B2 | ||
| Method of forming an etch indicator layer for reducing etch non-uniformities | ||
| Frank Feustel, Dresden (Germany); Thomas Werner, Moritzburg (Germany); and Kai Frohberg, Niederau (Germany) | ||
| Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US) | ||
| Filed on Mar. 20, 2007, as Appl. No. 11/688,280. | ||
| Claims priority of application No. 10 2006 035 668 (DE), filed on Jul. 31, 2006. | ||
| Prior Publication US 2008/0026487 A1, Jan. 31, 2008 | ||
| Int. Cl. H01L 21/311 (2006.01) | ||
| U.S. Cl. 438—700 [438/638; 438/673; 438/42] | 23 Claims |
| 1. A method, comprising:
implanting a specified etch control material into a material layer of a microstructure device to specify a target depth in
said material layer;
forming an etch mask above said material layer after implanting said specified etch control material;
patterning said material layer on the basis of said etch mask by performing an etch process; and
controlling said etch process on the basis of detecting said implanted etch control material released during said etch process.
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