| US 7,459,752 B2 | ||
| Ultra thin body fully-depleted SOI MOSFETs | ||
| Bruce B. Doris, Brewster, N.Y. (US); Meikei Ieong, Wappingers Falls, N.Y. (US); Zhibin Ren, Hopewell Junction, N.Y. (US); Paul M. Solomon, Yorktown Heights, N.Y. (US); and Min Yang, Yorktown Heights, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jun. 23, 2006, as Appl. No. 11/473,757. | ||
| Application 11/473757 is a continuation of application No. 10/710273, filed on Jun. 30, 2004, granted, now 7,091,069. | ||
| Prior Publication US 2006/0237791 A1, Oct. 26, 2006 | ||
| Int. Cl. H01L 27/12 (2006.01) | ||
| U.S. Cl. 257—348 [257/347; 257/368; 257/369; 257/327; 257/E29.117] | 18 Claims |
| 1. A silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) comprising:
a silicon-on-insulator (SOI) substrate having a SOI layer in which a first portion thereof has a thickness of less than about
20 nm;
a gate including a gate dielectric and a gate electrode located atop the first portion of the SOI layer having said thickness,
said gate electrode having an upper surface and a bottom surface that have the same length or said bottom surface has a length
that is greater than the upper surface; and
source and drain diffusion regions located in a second portion of the SOI layer that is adjacent to said first portion, said
second portion of the SOI layer is thicker than the first portion.
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