| US 7,459,705 B2 | ||
| Charged particle beam exposure method of character projection system, charged particle beam exposure device of character projection system, program for use in charged particle beam exposure device, and manufacturing method of semiconductor device | ||
| Tetsuro Nakasugi, Yokohama (Japan); Ryoichi Inanami, Yokohama (Japan); Takumi Ota, Yokohama (Japan); and Takeshi Koshiba, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Oct. 19, 2006, as Appl. No. 11/583,114. | ||
| Claims priority of application No. 2005-307656 (JP), filed on Oct. 21, 2005. | ||
| Prior Publication US 2007/0114463 A1, May 24, 2007 | ||
| Int. Cl. G03F 9/00 (2006.01); G21K 5/10 (2006.01); H01J 37/20 (2006.01) | ||
| U.S. Cl. 250—492.22 [250/492.23; 250/492.2; 250/492.3; 250/397] | 16 Claims |
| 1. A charged particle beam exposure method of a character projection system, comprising:
preparing an aperture mask having a plurality of character apertures;
correcting dimensions of designed patterns in design data in consideration of at least one of a forward scattering distance
of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle,
a distance by which an underlayer provided under a resist is influenced by a diffusion of an acid in the resist to be exposed
to the beam of the charged particle, and a dimension conversion difference of the designed patterns due to a denseness/coarseness
difference of the designed patterns caused when the underlayer is processed while using the resist as a mask;
allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask
to the corrected designed patterns to produce writing data; and
exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture
based on the writing data.
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