US 7,459,335 B2
Solid-state imaging apparatus and method for producing the same
Mikiya Uchida, Kyoto (Japan); Yoshiyuki Matsunaga, Kamakura (Japan); and Makoto Inagaki, Muko (Japan)
Assigned to Panasonic Corporation, Osaka (Japan)
Filed on Mar. 22, 2007, as Appl. No. 11/726,437.
Application 11/726437 is a division of application No. 10/809215, filed on Mar. 25, 2004, granted, now 7,214,976.
Claims priority of application No. 2003-096245 (JP), filed on Mar. 31, 2003.
Prior Publication US 2007/0184570 A1, Aug. 09, 2007
Int. Cl. H01L 21/00 (2006.01)
U.S. Cl. 438—73  [438/75; 438/97; 438/98] 6 Claims
OG exemplary drawing
 
1. A method for producing a solid-state imaging apparatus comprising:
a plurality of photosensitive cells disposed in a matrix in a photosensitive region on a semiconductor substrate; and
a driving unit for driving the plurality of photosensitive cells,
wherein each of the photosensitive cells includes:
a photodiode formed to be exposed on a surface of the semiconductor substrate, for accumulating signal charge obtained by subjecting incident light to photoelectric exchange;
a transfer transistor formed on the semiconductor substrate, for transferring the signal charge accumulated in the photodiode;
a floating diffusion layer formed on the semiconductor substrate, for temporarily accumulating the signal charge transferred by the transfer transistor; and
an amplifier transistor formed on the semiconductor substrate, for amplifying the signal charge temporarily accumulated in the floating diffusion layer,
wherein a source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on the surface of the semiconductor substrate,
the method comprising:
forming the photodiode, the transfer transistor, and the amplifier transistor on the semiconductor substrate;
forming a resist in a predetermined pattern so as to cover the photodiode, the transfer transistor, and the amplifier transistor;
implanting ions into the semiconductor substrate using the resist as a mask so as to form the floating diffusion layer;
removing the resist and forming a salicide blocking film so as to cover the floating diffusion layer and the photodiode;
forming a source/drain diffusion layer of the amplifier transistor; and
forming a salicide layer so as to cover the source/drain diffusion layer of the amplifier transistor.