| US 7,459,335 B2 | ||
| Solid-state imaging apparatus and method for producing the same | ||
| Mikiya Uchida, Kyoto (Japan); Yoshiyuki Matsunaga, Kamakura (Japan); and Makoto Inagaki, Muko (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Mar. 22, 2007, as Appl. No. 11/726,437. | ||
| Application 11/726437 is a division of application No. 10/809215, filed on Mar. 25, 2004, granted, now 7,214,976. | ||
| Claims priority of application No. 2003-096245 (JP), filed on Mar. 31, 2003. | ||
| Prior Publication US 2007/0184570 A1, Aug. 09, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—73 [438/75; 438/97; 438/98] | 6 Claims |

| 1. A method for producing a solid-state imaging apparatus comprising:
a plurality of photosensitive cells disposed in a matrix in a photosensitive region on a semiconductor substrate; and
a driving unit for driving the plurality of photosensitive cells,
wherein each of the photosensitive cells includes:
a photodiode formed to be exposed on a surface of the semiconductor substrate, for accumulating signal charge obtained by
subjecting incident light to photoelectric exchange;
a transfer transistor formed on the semiconductor substrate, for transferring the signal charge accumulated in the photodiode;
a floating diffusion layer formed on the semiconductor substrate, for temporarily accumulating the signal charge transferred
by the transfer transistor; and
an amplifier transistor formed on the semiconductor substrate, for amplifying the signal charge temporarily accumulated in
the floating diffusion layer,
wherein a source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating
diffusion layer is formed to be exposed on the surface of the semiconductor substrate,
the method comprising:
forming the photodiode, the transfer transistor, and the amplifier transistor on the semiconductor substrate;
forming a resist in a predetermined pattern so as to cover the photodiode, the transfer transistor, and the amplifier transistor;
implanting ions into the semiconductor substrate using the resist as a mask so as to form the floating diffusion layer;
removing the resist and forming a salicide blocking film so as to cover the floating diffusion layer and the photodiode;
forming a source/drain diffusion layer of the amplifier transistor; and
forming a salicide layer so as to cover the source/drain diffusion layer of the amplifier transistor.
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