| US 7,459,023 B2 | ||
| Method for producing semiconductor crystal | ||
| Shiro Yamazaki, Aichi-ken (Japan); Koji Hirata, Aichi-ken (Japan); Katsuhiro Imai, Nagoya (Japan); Makoto Iwai, Kasugai (Japan); Takatomo Sasaki, Minou (Japan); Yusuke Mori, Katano (Japan); Masashi Yoshimura, Takarazuka (Japan); Fumio Kawamura, Minou (Japan); and Yuji Yamada, Atsugi (Japan) | ||
| Assigned to Toyoda Gosei Co., Ltd., Aichi-ken (Japan); NGK Insulators, Ltd., Aichi-ken (Japan); and Osaka University, Osaka-fu (Japan) | ||
| Filed on Nov. 01, 2006, as Appl. No. 11/590,930. | ||
| Claims priority of application No. 2005-319019 (JP), filed on Nov. 02, 2005; and application No. 2006-075223 (JP), filed on Mar. 17, 2006. | ||
| Prior Publication US 2007/0101931 A1, May 10, 2007 | ||
| Int. Cl. C30B 25/12 (2006.01) | ||
| U.S. Cl. 117—81 [117/64; 117/68; 117/83; 117/104] | 20 Claims |
| 1. A method for producing a Group III nitride compound semiconductor crystal through a flux method employing a flux, the method
comprising:
growing a semiconductor crystal on a surface of a substrate which is at least partially formed of a flux-soluble material
which can be dissolved in the flux,
wherein the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on
which the semiconductor crystal is grown during said growing said semiconductor crystal,
wherein said flux-soluble material comprises a Group III nitride compound semiconductor having a dislocation density higher
than that of the semiconductor crystal to be grown, and
wherein said flux-soluble material has a crystal dislocation density of 1×106 cm−2 or greater.
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