| US 7,612,345 B2 | ||
| Radiation detector crystal and method of formation thereof | ||
| Csaba Szeles, Allison Park, Pa. (US); Scott E. Cameron, Lower Burrell, Pa. (US); Vincent D. Mattera, Jr., Gibsonia, Pa. (US); and Utpal K. Chakrabarti, Allentown, Pa. (US) | ||
| Assigned to Endicott Interconnect Technologies, Inc., Endicott, N.Y. (US) | ||
| Appl. No. 10/594,934 PCT Filed Jan. 27, 2006, PCT No. PCT/US2006/003152 § 371(c)(1), (2), (4) Date Oct. 29, 2007, PCT Pub. No. WO2006/081532, PCT Pub. Date Aug. 03, 2006. |
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| Claims priority of provisional application 60/647589, filed on Jan. 27, 2005. | ||
| Prior Publication US 2009/0041648 A1, Feb. 12, 2009 | ||
| Int. Cl. G01T 1/24 (2006.01) | ||
| U.S. Cl. 250—370.13 [257/614] | 15 Claims |
| 6. A method of forming a radiation detector crystal comprising:
(a) providing a melt comprised of:
(1) a mixture of CdxZn1-xTe, where 0≤x≤1,
(2) a first dopant that adds shallow level donors (electrons) to the top of an energy band gap of said mixture when it is
solidified, and
(3) a second dopant that adds deep level donors and/or acceptors to the middle of said energy band gap of said mixture when
it is solidified, wherein the second dopant is one of the elements of Ruthenium (Ru) and Osmium (Os); and
(b) solidifying said melt in a manner to form the crystal.
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