| US 7,604,903 B1 | ||
| Mask having sidewall absorbers to enable the printing of finer features in nanoprint lithography (1XMASK) | ||
| Bhanwar Singh, Morgan Hills, Calif. (US); Srikanteswara Dakshina-Murthy, Wappingers Falls, N.Y. (US); Khoi A. Phan, Santa Jose, Calif. (US); Bharath Rangarajan, Santa Clara, Calif. (US); and Ramkumar Subramanian, Sunnyvale, Calif. (US) | ||
| Assigned to Advanced Micro Devices, Inc., Sunnyvale, Calif. (US) | ||
| Filed on Jan. 30, 2004, as Appl. No. 10/768,515. | ||
| Int. Cl. G03F 1/00 (2006.01); G03F 1/14 (2006.01) | ||
| U.S. Cl. 430—5 | 8 Claims |
| 1. A mask for a nanoprint lithographic process, comprising:
a translucent material that transfers a pattern from the mask to a substrate when placed in physical contact with the substrate
or when placed against the substrate with a predetermined low pressure applied there between;
one or more three-dimensional features comprising one or more vertical sidewalls;
an absorbing material deposited upon one or more of the vertical sidewalls so that light incident on an upper surface of the
translucent material will be absorbed by the absorbing material, resulting in light blocking features such that upon the transfer
of the pattern, the substrate comprises features which directly correspond to areas of the absorbing material deposited on
the vertical sidewalls; and
one or more horizontal surfaces, formed upon one or more of the three-dimensional features, that allow light rays to exit
a lower surface of the substrate unobstructed by the absorbing material.
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