| US 7,602,829 B2 | ||
| Semiconductor light emitting device and method of manufacturing same | ||
| Takayuki Matsuyama, Kanagawa-ken (Japan); and Masaaki Onomura, Tokyo (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Minato-ku, Tokyo (Japan) | ||
| Filed on Oct. 11, 2006, as Appl. No. 11/545,756. | ||
| Claims priority of application No. 2005-296931 (JP), filed on Oct. 11, 2005. | ||
| Prior Publication US 2008/0181275 A1, Jul. 31, 2008 | ||
| Int. Cl. H01S 5/00 (2006.01) | ||
| U.S. Cl. 372—49.01 [372/43.01] | 19 Claims |
| 1. A semiconductor light emitting device comprising:
a gallium nitride substrate;
a multilayer film of nitride semiconductors provided on the gallium nitride substrate, the multilayer film including a light
emitting layer, and the gallium nitride substrate and the multilayer film having a laser light emitting facet and a laser
light reflecting facet;
a first film including at least a first silicon nitride layer, the first silicon nitride layer being provided adjacent to
the laser light emitting facet; and
a second film including a second silicon nitride layer and a laminated film provided on the second silicon nitride layer,
the second silicon nitride layer being provided adjacent to the laser light reflecting facet, the laminated film including
at least one oxide layer and at least one silicon nitride layer which are alternately laminated.
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