| US 7,602,693 B2 | ||
| Data recording apparatus | ||
| Junichi Akiyama, Kanagawa (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Sep. 05, 2006, as Appl. No. 11/515,397. | ||
| Claims priority of application No. 2005-256466 (JP), filed on Sep. 05, 2005. | ||
| Prior Publication US 2007/0053101 A1, Mar. 08, 2007 | ||
| Int. Cl. G11B 9/00 (2006.01) | ||
| U.S. Cl. 369—126 [369/288; 369/94; 369/99] | 8 Claims |
| 1. A data recording apparatus comprising:
a recording medium that includes
a semiconductor substrate;
a first insulating layer which is formed on a first surface of the semiconductor substrate;
a second insulating layer which is formed on the first insulating layer and is made to accumulate electric charge;
an electrode layer which is formed on a second surface of the semiconductor substrate; and
an insulating area which penetrates the first and the second insulating layers and whose bottom is disposed in the semiconductor
substrate; and
an electrode that applies a voltage to the recording medium, wherein
a depth from an interface between the semiconductor substrate and the first insulating layer to the bottom of the insulating
area is more than a maximum depth of a depletion layer, Wmax which is represented by
Wmax=√{square root over (2∈0∈i×2|φf|/qNd)}
where ∈0 is a dielectric constant of vacuum, ∈i is a relative dielectric constant, |φf| is an absolute value of the Felmi potential of the semiconductor substrate, q is an electric charge of an electron, and
Nd is an impurity concentration of the semiconductor substrate.
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