| US 7,602,652 B2 | ||
| Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory | ||
| Teruhiko Kamei, Yokohama (Japan) | ||
| Assigned to SanDisk Corporation, Milpitas, Calif. (US) | ||
| Filed on Feb. 27, 2008, as Appl. No. 12/38,421. | ||
| Application 12/038421 is a division of application No. 11/425116, filed on Jun. 19, 2006, granted, now 7,352,628. | ||
| Prior Publication US 2008/0158996 A1, Jul. 03, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/06 (2006.01) | ||
| U.S. Cl. 365—185.24 [365/185.03; 365/185.17; 365/185.22; 365/185.28] | 17 Claims |
| 1. A non-volatile memory system, comprising:
a first group of non-volatile storage elements from a set of non-volatile storage elements that are programmed together, said
first group is programmed to a first physical state associated with a first range of threshold voltages, said set of non-volatile
storage elements is programmed from lower threshold voltages to higher threshold voltages;
a second group of non-volatile storage elements from said set of non-volatile storage elements, said second group is programmed
to a second physical state associated with a second range of threshold voltages, said first and second ranges of threshold
voltages defining a first margin of a first size between said first physical state and said second physical state, said second
range of threshold voltages includes larger threshold voltages than said first range of threshold voltages; and
a third group of non-volatile storage elements from said set of non-volatile storage elements, said third group is programmed
to a third physical state associated with a third range of threshold voltages, said second and third ranges of threshold voltages
defining a second margin between said second physical state and said third physical state of a second size smaller than said
first size said third range of threshold voltages includes larger threshold voltages than said second range of threshold voltages.
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