US 7,602,588 B2
Magnetic sensor using a magnetic oscillation element
Rie Sato, Yokohama (Japan); and Kiwamu Kudo, Kawasaki (Japan)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan)
Filed on Mar. 24, 2006, as Appl. No. 11/387,900.
Claims priority of application No. 2005-104470 (JP), filed on Mar. 31, 2005.
Prior Publication US 2006/0221507 A1, Oct. 05, 2006
Int. Cl. G11B 5/33 (2006.01)
U.S. Cl. 360—324 11 Claims
OG exemplary drawing
 
1. A magnetic sensor comprising:
a magnetic oscillation element including a first magnetic resonance layer, a second magnetic resonance layer, a nonmagnetic layer sandwiched between the first and second magnetic resonance layers, and a pair of electrodes which supply a current perpendicularly to planes of the first resonance layer, the nonmagnetic layer and the second magnetic resonance layer; and
a monitor configured to monitor a change caused by an external magnetic field by determining a change in a high-frequency oscillation voltage generated across the magnetic oscillation element due to precession of magnetization in at least one of the first and second magnetic resonance layers caused by supplying the current.