| US 7,602,432 B2 | ||
| Solid-state imaging element and solid-state imaging device | ||
| Toshihisa Makihira, Fukuoka (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Nov. 09, 2006, as Appl. No. 11/558,232. | ||
| Claims priority of application No. P2005-328024 (JP), filed on Nov. 11, 2005. | ||
| Prior Publication US 2007/0195184 A1, Aug. 23, 2007 | ||
| Int. Cl. H04N 5/335 (2006.01) | ||
| U.S. Cl. 348—316 [348/312; 348/315] | 4 Claims |
| 1. A solid-state imaging element comprising:
an imaging element area configured to include a plurality of two-dimensionally arranged photosensors and a plurality of vertical
transfer registers that vertically transfer a signal charge arising from photoelectric conversion by the plurality of photosensors
for each vertical column of the two-dimensionally arranged photosensors;
a first horizontal transfer register configured to horizontally transfer a signal charge transferred from the plurality of
vertical transfer registers by a first transfer part and a second transfer part that are alternately disposed along a horizontal
transfer direction;
a second horizontal transfer register configured to horizontally transfer a signal charge transferred from the plurality of
vertical transfer registers via the first horizontal transfer register;
a first transfer channel configured to be provided between the first transfer part and the vertical transfer register;
a second transfer channel configured to be provided between the second transfer part and the second horizontal transfer register;
and
a channel stop region configured to be provided between the second transfer part and the imaging element area, wherein
a signal charge transferred from the vertical transfer register via the first transfer channel to the first transfer part
is transferred via the second transfer part to the second horizontal transfer register.
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