| US 7,602,099 B2 | ||
| Surface acoustic wave device and method of manufacturing the same | ||
| Haruhiko Fujimoto, Fukushima-ken (Japan); Kyosuke Ozaki, Fukushima-ken (Japan); Satoshi Waga, Fukushima-ken (Japan); Toshihiro Meguro, Fukushima-ken (Japan); and Takeshi Ikeda, Fukushima-ken (Japan) | ||
| Assigned to Alps Electric Co., Ltd., Tokyo (Japan) | ||
| Filed on Apr. 21, 2006, as Appl. No. 11/409,189. | ||
| Claims priority of application No. 2005-160952 (JP), filed on Jun. 01, 2005. | ||
| Prior Publication US 2006/0273687 A1, Dec. 07, 2006 | ||
| Int. Cl. H01L 41/047 (2006.01) | ||
| U.S. Cl. 310—313A | 15 Claims |
| 1. A surface acoustic wave device having high power resistance, comprising:
a piezoelectric substrate; and
an electrode portion having a thin-film structure formed on the piezoelectric substrate,
wherein the electrode portion has an interdigital transducer portion and a connection electrode portion connected to the interdigital
transducer portion,
the interdigital transducer portion has a base layer and a main electrode layer laminated on the base layer, and
the base layer has a first base layer made of TiN or TiOxNy (where, 0<x<0.2, x+y=1) and a second base layer made of Cr.
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