| US 7,602,061 B2 | ||
| Semiconductor device and method for manufacturing semiconductor device | ||
| Yoshihisa Kagawa, Kanagawa (Japan); Tsutomu Shimayama, Kanagawa (Japan); and Takatoshi Kameshima, Kanagawa (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Aug. 29, 2007, as Appl. No. 11/846,807. | ||
| Claims priority of application No. 2006-238628 (JP), filed on Sep. 04, 2006. | ||
| Prior Publication US 2008/0054454 A1, Mar. 06, 2008 | ||
| Int. Cl. H01L 23/48 (2006.01); H01L 21/28 (2006.01) | ||
| U.S. Cl. 257—734 [438/674] | 5 Claims |
| 1. A semiconductor device comprising:
a substrate;
an insulating film on the substrate and porosified through decomposition and removal of a pore-forming material;
a covering insulating film on the insulating film; and
conductive layer patterns in the covering insulating film and the insulating film which extend through the covering insulating
film and insulating film to the substrate,
wherein,
the insulating film includes a non-porous region in which the pore-forming material remains,
the covering insulating film and the insulating film include a first region in which the conductive layer patterns are densely
disposed and a second region in which the conductive layer patterns are disposed more sparsely than in the first region, and
the non-porous region is located centrally between the conductive layer patterns in the second region.
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