| US 7,602,013 B2 | ||
| Semiconductor device with recessed channel | ||
| Kiyotaka Miyano, Tokyo (Japan); Ichiro Mizushima, Yokohama (Japan); and Kouji Matsuo, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jan. 05, 2007, as Appl. No. 11/649,752. | ||
| Claims priority of application No. P2006-107385 (JP), filed on Apr. 10, 2006. | ||
| Prior Publication US 2007/0238255 A1, Oct. 11, 2007 | ||
| Int. Cl. H01L 29/78 (2006.01) | ||
| U.S. Cl. 257—328 [257/401; 257/E21.428] | 4 Claims |
| 1. A semiconductor device, comprising:
a semiconductor substrate consisting of silicon (Si);
a first layer provided on or above said semiconductor substrate, having an opening, and containing silicon (Si) and germanium
(Ge);
a channel region provided in the semiconductor substrate at a position corresponding to the opening, the channel region consisting
of silicon (Si);
a gate insulation film provided at the position corresponding to the opening;
a gate electrode provided on said gate insulation film; and
a gate sidewall insulation film formed on the first layer.
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