| US 7,601,994 B2 | ||
| Display device and method for manufacturing the same | ||
| Kunihiko Fukuchi, Gifu (Japan); Gen Fujii, Kanagawa (Japan); Osamu Nakamura, Kanagawa (Japan); and Shinji Maekawa, Shizuoka (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Appl. No. 10/576,819 PCT Filed Nov. 05, 2004, PCT No. PCT/JP2004/016813 § 371(c)(1), (2), (4) Date Apr. 24, 2006, PCT Pub. No. WO2005/047968, PCT Pub. Date May 26, 2005. |
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| Claims priority of application No. 2003-386030 (JP), filed on Nov. 14, 2003. | ||
| Prior Publication US 2007/0057258 A1, Mar. 15, 2007 | ||
| Int. Cl. H01L 27/10 (2006.01) | ||
| U.S. Cl. 257—211 [257/503; 257/508; 257/E33.062] | 42 Claims |
| 1. A display device comprising:
an adhesion improving layer comprising one of a metal material and a metal oxide material over and in contact with one substrate
of a pair of substrates;
a thin film transistor including:
a gate electrode comprising a conductive material over and in contact with the adhesion improving layer;
an island shape gate insulating film including at least one of a silicon nitride layer, a silicon oxynitride layer, and a
silicon oxide layer, which is over the gate electrode;
a semiconductor layer over the island shape gate insulating film; and
source and drain wirings comprising a conductive material, which is connected to the semiconductor layer; and
a pixel electrode connected to the thin film transistor,
wherein an end of the semiconductor layer is provided so as not to protrude from an end of the island shape gate insulating
film.
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