| US 7,601,985 B2 | ||
| Semiconductor light-emitting device | ||
| Yoshitaka Kinoshita, Kagoshima (Japan); and Hidenori Kamei, Fukuoka (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Sep. 15, 2006, as Appl. No. 11/521,491. | ||
| Claims priority of application No. 2005-267852 (JP), filed on Sep. 15, 2005. | ||
| Prior Publication US 2007/0057282 A1, Mar. 15, 2007 | ||
| Int. Cl. H01L 31/0256 (2006.01) | ||
| U.S. Cl. 257—76 [257/79; 257/94; 257/96; 257/97; 257/190; 257/196; 257/E31.019; 257/E31.022; 257/E27.12; 257/E33.023; 257/E33.024; 257/E33.025; 257/E33.026; 257/E33.027; 257/E33.028; 257/E33.029; 257/E33.03; 257/E33.032; 257/E33.033; 257/E33.034; 257/E33.044; 257/E33.048; 257/E33.049; 257/101; 257/183; 257/E33.031; 438/46; 438/47; 372/43.01; 372/45.011; 372/50.1] | 7 Claims |
| 1. A semiconductor light-emitting device comprising:
a substrate;
a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers
of a first conductivity type;
an active layer formed on the first conductivity type layer; and
a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second
conductivity type, wherein
the first conductivity type layer includes:
an intermediate layer made of AlxGa1−x−yInyN (wherein 0.001≤x<0.05, 0<y<1 and x+y<1),
a first layer formed between the substrate and the intermediate layer, and
a second layer formed between the intermediate layer and the active layer, and
the first layer and the second layer contain impurities of the first conductivity type, and concentrations of the impurities
are equal to each other.
|