| US 7,601,640 B2 | ||
| Method of manfacturing semiconductor device | ||
| Toshiyuki Takewaki, Kanagawa (Japan); Manabu Iguchi, Kanagawa (Japan); Daisuke Oshida, Kanagawa (Japan); Hironori Toyoshima, Kanagawa (Japan); Masayuki Hiroi, Kanagawa (Japan); Takuji Onuma, Kanagawa (Japan); Hiroaki Nanba, Kanagawa (Japan); Ichiro Honma, Kanagawa (Japan); Mieko Hasegawa, Kanagawa (Japan); Yasuaki Tsuchiya, Kanagawa (Japan); Toshiji Taiji, Kanagawa (Japan); and Takaharu Kunugi, Kanagawa (Japan) | ||
| Assigned to NEC Electronics Corporation, Kanagawa (Japan) | ||
| Filed on Dec. 10, 2007, as Appl. No. 11/953,127. | ||
| Claims priority of application No. 2006-331965 (JP), filed on Dec. 08, 2006. | ||
| Prior Publication US 2008/0160750 A1, Jul. 03, 2008 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—687 [438/690; 438/692; 257/E21.23; 257/E21.214] | 9 Claims |
| 1. A method of manufacturing a semiconductor device, comprising:
forming a copper-containing metal layer over a semiconductor substrate;
polishing said copper-containing metal layer; and
cleaning a surface of said copper-containing metal layer after polishing said copper-containing metal layer;
wherein said cleaning the surface of said copper-containing metal layer includes:
a first process including bringing a polycarboxylic acid into contact with a primary surface of said semiconductor substrate
over which said copper-containing metal layer is provided;
a second process including bringing a reduced water into contact with said primary surface after said first process;
a third process including bringing benzotriazole or a derivative thereof with said primary surface after said second process;
and
a fourth process including bringing an alkaline aqueous solution into contact with said primary surface after said third process.
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