| US 7,601,603 B2 | ||
| Method for manufacturing semiconductor device | ||
| Shoichi Yamauchi, Nagoya (Japan); Hitoshi Yamaguchi, Nisshin (Japan); Tomoatsu Makino, Okazaki (Japan); Syouji Nogami, Tokyo (Japan); and Tomonori Yamaoka, Tokyo (Japan) | ||
| Assigned to DENSO CORPORATION, Kariya (Japan); and Sumitomo Mitsubishi Silicon Corporation, Tokyo (Japan) | ||
| Filed on Mar. 31, 2005, as Appl. No. 11/94,782. | ||
| Claims priority of application No. 2004-107859 (JP), filed on Mar. 31, 2004; and application No. 2004-352010 (JP), filed on Dec. 03, 2004. | ||
| Prior Publication US 2005/0221547 A1, Oct. 06, 2005 | ||
| Int. Cl. H01L 21/20 (2006.01) | ||
| U.S. Cl. 438—388 [438/245; 438/270; 438/700; 257/E21.384; 257/E21.428] | 18 Claims |
| 1. A method for manufacturing a semiconductor device comprising the steps of:
forming a trench in a semiconductor substrate; and
forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled
in the trench, wherein
the step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film,
the final step has a forming condition of the epitaxial film in such a manner that a mixture of a silicon source gas and a
halogenide gas is used for forming the epitaxial film,
the step of forming the epitaxial film further includes a first step,
the first step is such that the epitaxial film having an impurity doped in the epitaxial film is formed on the bottom and
the sidewall of the trench to have a predetermined thickness,
the final step is such that the epitaxial film having no impurity doped or a low concentration impurity doped in the epitaxial
film is formed to fill an inside of the trench, and
the low concentration impurity of the epitaxial film in the final step has an impurity concentration lower than that in the
first step.
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