| US 7,601,571 B2 | ||
| Methods of manufacturing interferometric modulators with thin film transistors | ||
| Clarence Chui, San Jose, Calif. (US); and Stephen Zee, San Jose, Calif. (US) | ||
| Assigned to IDC, LLC, Pleasanton, Calif. (US) | ||
| Filed on Aug. 10, 2007, as Appl. No. 11/837,140. | ||
| Application 11/837140 is a division of application No. 10/883902, filed on Jul. 02, 2004, granted, now 7,256,922. | ||
| Prior Publication US 2007/0275491 A1, Nov. 29, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/84 (2006.01) | ||
| U.S. Cl. 438—149 [438/197; 438/70; 257/E21.32; 257/E21.316; 257/E21.332; 257/E21.411] | 9 Claims |
| 1. A method of manufacturing an interferometric modulator with film semiconductor circuit components, the method comprising:
depositing a material layer over a transparent substrate; and
patterning and etching the material layer to form a portion of at least one interferometric modulator element and a portion
of at least one film semiconductor circuit component.
|