| US 7,601,441 B2 | ||
| One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer | ||
| Jason Ronald Jenny, Wake Forest, N.C. (US); David Phillip Malta, Raleigh, N.C. (US); Hudson McDonald Hobgood, Pittsboro, N.C. (US); Stephan Georg Mueller, Durham, N.C. (US); Mark Brady, Carrboro, N.C. (US); Robert Tyler Leonard, Raleigh, N.C. (US); Adrian Powell, Apex, N.C. (US); and Valerl F. Tsvetkov, Durham, N.C. (US) | ||
| Assigned to Cree, Inc., Durham, N.C. (US) | ||
| Filed on Jun. 25, 2004, as Appl. No. 10/876,963. | ||
| Application 10/876963 is a continuation in part of application No. 10/064232, filed on Jun. 24, 2002, granted, now 6,814,801. | ||
| Prior Publication US 2005/0126471 A1, Jun. 16, 2005 | ||
| Int. Cl. B32B 19/00 (2006.01); H01L 31/0312 (2006.01) | ||
| U.S. Cl. 428—698 [428/409; 257/77; 117/951] | 30 Claims |
| 1. A silicon carbide wafer comprising:
a single polytype single crystal;
a diameter greater than three inches and less than five inches;
a resistivity greater than 10,000 ohm-cm;
a micropipe density less than 200 cm−2; and
a combined concentration of shallow level dopants less than 5E16 cm−3.
|