| US 7,601,402 B2 | ||
| Method for forming insulation film and apparatus for forming insulation film | ||
| Yusaku Kashiwagi, Nirasaki (Japan); Yoshihisa Kagawa, Nirasaki (Japan); Kohei Kawamura, Nirasaki (Japan); and Gishi Chung, Nirasaki (Japan) | ||
| Assigned to Tokyo Electron Limited, Tokyo (Japan) | ||
| Filed on Nov. 07, 2003, as Appl. No. 10/703,092. | ||
| Claims priority of application No. 2002-325379 (JP), filed on Nov. 08, 2002. | ||
| Prior Publication US 2004/0212114 A1, Oct. 28, 2004 | ||
| Int. Cl. H05H 1/24 (2006.01) | ||
| U.S. Cl. 427—535 [427/577; 427/578; 427/249.15] | 13 Claims |
| 1. A method for forming a porous insulating film having a cyclic siloxane structure, comprising:
forming an insulating film having the cyclic siloxane structure by generating a plasma of mixed gas of an organic siloxane
group compound having the cyclic siloxane structure and an organic compound having a polar group, wherein molecules of the
organic compound having the polar group are contained within the cyclic siloxane structure of the insulating film; and
forming pores by exposing, to excitation gas, the insulating film having the cyclic siloxane structure and removing molecules
of the organic compound having the polar group from the insulating film while maintaining the cyclic siloxane structure; wherein
the insulating film forming and the pore forming are performed alternatively and repeatedly to form the porous insulating
film of predetermined thickness.
|