	US 7,601,241 B2
	Plasma processing apparatus and plasma processing method
Tsutomu Tetsuka, Ibaraki-ken (Japan); Kazuyuki Ikenaga, Ibaraki-ken (Japan); Tetsuo Ono, Iruma (Japan); Motohiko Yoshigai, Hikari (Japan); and Naoshi Itabashi, Hachioji (Japan)
Assigned to Hitachi, Ltd., Tokyo (Japan); and Hitachi High-Technologies Corporation, Tokyo (Japan)
Filed on Feb. 24, 2004, as Appl. No. 10/784,275.
Claims priority of application No. 2003-425594 (JP), filed on Dec. 22, 2003.
Prior Publication US 2005/0133162 A1, Jun. 23, 2005
Int. Cl. C23C 16/50 (2006.01); C23C 16/505 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); C23C 16/06 (2006.01); C23C 16/30 (2006.01); C23C 16/38 (2006.01); C23C 16/32 (2006.01)

U.S. Cl. 156—345.46 [118/723 E; 156/345.45; 156/345.47]

11 Claims

1. A plasma processing apparatus for processing a substrate with plasma by applying a high frequency to a reaction chamber so as to generate plasma therein, and applying a second high frequency to a substrate holder on which the substrate is placed so as to control the ion energy to the substrate; wherein

a dielectric that is exposed to the plasma substantially covers a surface portion of an inner wall of the reaction chamber, an electrically conductive member is disposed within the reaction chamber so as to be exposed to the plasma within the reaction chamber at a position with respect to the inner wall of the reaction chamber which is covered with the dielectric, and the electrically conductive member is electrically coupled to earth one of directly and through the inner wall of the reaction chamber so as to form a DC earth which enables direct current to flow therein from the plasma, the electrically conductive member has an area in a range of 0.1% to 10% of the inner wall area of the reaction chamber, a magnetic field generation means is disposed outside of the reaction chamber so as to apply a magnetic field to the plasma, and the electrically conductive member forming the DC earth is disposed at a position crossing a magnetic line of force that is closer to the substrate holder than a magnetic line of force that crosses the inner wall of the reaction chamber having the dielectric thereon.