| US 7,601,181 B2 | ||
| Methods of making thin film capacitors comprising a manganese doped barium titantate dielectric | ||
| William Borland, Chapel Hill, N.C. (US); Ian Burn, Hockessin, Del. (US); Jon Fredrick Ihlefeld, State College, Pa. (US); Jon Paul Maria, Raleigh, N.C. (US); and Seigi Suh, Cary, N.C. (US) | ||
| Assigned to E.I. du Pont de Nemours and Company, Wilmington, Del. (US); and North Carolina State University, Raleigh, N.C. (US) | ||
| Filed on Oct. 25, 2007, as Appl. No. 11/923,974. | ||
| Application 11/923974 is a division of application No. 11/157621, filed on Jun. 21, 2005, abandoned. | ||
| Prior Publication US 2008/0047117 A1, Feb. 28, 2008 | ||
| Int. Cl. H01L 21/8242 (2006.01); H01G 9/00 (2006.01) | ||
| U.S. Cl. 29—25.03 [438/250; 438/253; 361/313] | 11 Claims |
| 1. A method of making a capacitor comprising:
providing a metallic foil;
forming a dielectric layer over the metallic foil,
wherein the dielectric layer is formed from a solution composition that forms barium titanate during annealing and
contains manganese in an amount between 0.002 and 0.05 atom percent of the solution composition;
annealing the dielectric layer at a temperature between about 800° C. to 1050° C. and in a reducing atmosphere having an oxygen
partial pressure of less than about 10−8 atmospheres to form a dielectric having a thickness between 0.4 and 1.0 micrometer; and
forming a conductive layer over the dielectric, wherein the metallic foil, the dielectric, and the conductive layer form the
capacitor, and wherein the dielectric is not re-oxygenated after annealing and wherein the capacitor has a leakage current
density of less than approximately 1 milli-amp/cm2 at 10 volts.
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