| US 7,600,881 B2 | ||
| Semiconductor light emitting apparatus and its manufacturing method | ||
| Takayuki Sakai, Tokyo (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jun. 01, 2007, as Appl. No. 11/756,959. | ||
| Application 11/756959 is a division of application No. 11/067760, filed on Mar. 01, 2005, granted, now 7,242,031. | ||
| Claims priority of application No. 2004-058197 (JP), filed on Mar. 02, 2004. | ||
| Prior Publication US 2007/0221937 A1, Sep. 27, 2007 | ||
| Int. Cl. A61G 13/00 (2006.01); G02B 6/36 (2006.01); H01J 63/04 (2006.01); B05D 5/06 (2006.01) | ||
| U.S. Cl. 362—31 [362/27; 362/582; 313/512; 427/66] | 20 Claims |
| 1. A semiconductor light emitting apparatus comprising:
a semiconductor light emitting device; and
a resin that seals the semiconductor light emitting device,
at least a portion of the surface of the resin being provided with asperities having an average pitch less than ½ of a wavelength
of light emitted through the resin,
wherein the wavelength λ of the light, an average width a of projections of the asperities, an average width b of recesses
of the asperities, a refractive index n1 of the resin and a refractive index n2 of air generally satisfy a following condition:
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