| US 7,599,220 B2 | ||
| Charge trapping memory and accessing method thereof | ||
| Yung-Feng Lin, Taoyuan (Taiwan); and Chun-Hsiung Hung, Hsinchu (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on May 25, 2007, as Appl. No. 11/802,785. | ||
| Prior Publication US 2008/0291722 A1, Nov. 27, 2008 | ||
| Int. Cl. G11C 16/06 (2006.01) | ||
| U.S. Cl. 365—185.2 [365/185.21; 365/189.09; 365/210.1; 365/210.11; 365/210.12] | 19 Claims |

| 1. A charge trapping memory, comprising:
a plurality of memory cell blocks each comprising a plurality of memory cells and a plurality of tracking cells for storing
expected data;
a reference current generator for outputting a present reference current;
a plurality of sense amplifiers; and
a plurality of comparators, wherein:
in a specific time, the sense amplifiers sense the data stored in the tracking cells as read data according to the present
reference current, then the comparators compare the read data with the expected data to obtain a difference, the reference
current generator adjusts the present reference current to an adjusted reference current according to the difference so that
the sense amplifiers sense the data stored in the tracking cells as the expected data, and then the sense amplifiers read
the memory cells according to the adjusted reference current.
|