| US 7,598,596 B2 | ||
| Methods and apparatus for a dual-metal magnetic shield structure | ||
| Jaynal A. Molla, Gilbert, Ariz. (US); Gregory W. Grynkewich, Gilbert, Ariz. (US); and Eric J. Salter, Scottsdale, Ariz. (US) | ||
| Assigned to Freescale Semiconductor, Inc., Austin, Tex. (US) | ||
| Filed on Nov. 21, 2006, as Appl. No. 11/602,639. | ||
| Prior Publication US 2008/0116535 A1, May 22, 2008 | ||
| Int. Cl. H01L 23/552 (2006.01); H01L 21/00 (2006.01); H01L 21/8246 (2006.01) | ||
| U.S. Cl. 257—659 [257/E23.114; 257/E21.665; 438/57; 438/123] | 19 Claims |
| 1. A shield structure for shielding an electromagnetic-field-susceptible region of a semiconductor component located on a
substrate that has a top surface and a bottom surface, the structure comprising:
a first shield structure formed over the semiconductor component and the top surface of the substrate, wherein the first shield
structure includes
a first stress-relief layer electrodeposited over the semiconductor component in a shield region substantially corresponding
to the electromagnetic-field-susceptible region, wherein the first stress-relief layer has a first stress condition, and
a first magnetic shield layer electrodeposited over the stress-relief layer and mechanically coupled to the first stress-relief
layer within the shield region, wherein the first magnetic shield layer has a second stress condition that is substantially
opposite of the first stress condition, wherein sides of the first stress-relief layer and sides of the first magnetic shield
layer define a perimeter of the shield region;
a leadframe; and
a second shield structure formed on the leadframe, wherein the second shield structure includes
a second stress-relief layer formed under the semiconductor component, wherein the second stress-relief layer has the first
stress condition, and
a second magnetic shield layer mechanically coupled to the second stress-relief layer, wherein the second magnetic shield
layer has the second stress condition, and wherein the bottom surface of the substrate is mounted on the second shield structure.
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