| US 7,598,512 B2 | ||
| Thin film fuse phase change cell with thermal isolation layer and manufacturing method | ||
| Shih Hung Chen, Elmsford, N.Y. (US) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Aug. 22, 2006, as Appl. No. 11/466,421. | ||
| Application 11/466421 is a continuation in part of application No. 11/155067, filed on Jun. 17, 2005, granted, now 7,321,130. | ||
| Prior Publication US 2006/0284214 A1, Dec. 21, 2006 | ||
| Int. Cl. H01L 47/00 (2006.01) | ||
| U.S. Cl. 257—2 [257/E45.002] | 23 Claims |
| 1. A memory device, comprising:
a first electrode having a top side,
a second electrode having a top side;
an insulating member between the first electrode and the second electrode, the insulating member having a thickness between
the first and second electrodes near the top side of the first electrode and the top side of the second electrode; and
a bridge across the insulating member, the bridge having a first side and a second side and contacting the top sides of first
and second electrodes on the first side, and defining an inter-electrode path between the first and second electrodes across
the insulating member, the inter-electrode path having a path length defined by the width of the insulating member, wherein
the bridge comprises an active layer of memory material on the first side having at least two solid phases and a blanket of
thermally insulating material overlying the memory material; and
a layer of electrically insulating material over the blanket of thermally insulating material, wherein the thermally insulating
material of the blanket has a thermal conductivity less than that of the electrically insulating material.
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