| US 7,598,178 B2 | ||
| Carbon precursors for use during silicon epitaxial film formation | ||
| Arkadii V. Samoilov, Sunnyvale, Calif. (US); Rohini Kodali, Saratoga, Calif. (US); Ali Zojaji, Santa Clara, Calif. (US); and Yihwan Kim, Milpitas, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Mar. 23, 2007, as Appl. No. 11/690,588. | ||
| Claims priority of provisional application 60/785740, filed on Mar. 24, 2006. | ||
| Prior Publication US 2008/0044932 A1, Feb. 21, 2008 | ||
| Int. Cl. H01L 21/336 (2006.01); H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—706 [438/300; 438/689; 438/714; 257/E21.09; 257/E21.43; 257/E21.461] | 22 Claims |
| 1. A method of forming an epitaxial film on a substrate comprising:
(a) providing a substrate;
(b) exposing the substrate to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and
C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an
epitaxial film on at least a portion of the substrate; and
(c) exposing the substrate to an etchant so as to etch the epitaxial film and any other films formed during step (b), the
etchant comprising a compound from the group consisting of HCl and Cl2, and combinations thereof, wherein a larger flow rate
of HCl relative to Cl2 is employed.
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