| US 7,598,160 B2 | ||
| Method for manufacturing thin film semiconductor | ||
| Akio Machida, Kanagawa (Japan); Toshio Fujino, Kanagawa (Japan); and Tadahiro Kono, Tokyo (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Jun. 06, 2008, as Appl. No. 12/134,698. | ||
| Application 12/134698 is a division of application No. 11/685550, filed on Mar. 13, 2007, granted, now 7,521,712. | ||
| Claims priority of application No. P2006-067273 (JP), filed on Mar. 13, 2006; and application No. P2006-347053 (JP), filed on Dec. 25, 2006. | ||
| Prior Publication US 2008/0241981 A1, Oct. 02, 2008 | ||
| Int. Cl. H01L 21/36 (2006.01) | ||
| U.S. Cl. 438—487 [438/307; 438/378; 438/795; 438/799] | 5 Claims |
| 1. A method for manufacturing a thin film semiconductor device, the method comprising:
crystallizing an active region of a semiconductor thin film by irradiating the semiconductor thin film with an energy beam;
and
forming a gate electrode that has a shape traversing the active region,
wherein in crystallizing the active region, an irradiation position of the energy beam is shifted in a predetermined shift
direction to thereby turn the active region into a polycrystalline region in such a way that a crystalline state is changed
cyclically in the shift direction, and
wherein in forming the gate electrode, the gate electrode is formed along a direction along which areas each having a substantially
same crystalline state extend, wherein in crystallizing the active region, the irradiation position of the energy beam is
shifted in the predetermined shift direction in such a way that an irradiated region does not overlap with an adjacent irradiated
region, to thereby cyclically leave an amorphous area between crystalline areas arising from polycrystallization of the semiconductor
thin film.
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