| US 7,598,153 B2 | ||
| Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species | ||
| Francois J. Henley, Aptos, Calif. (US); James Andrew Sullivan, Woodside, Calif. (US); Sien Giok Kang, Dublin, Calif. (US); Philip James Ong, Milpitas, Calif. (US); Harry Robert Kirk, Campbell, Calif. (US); David Jacy, San Jose, Calif. (US); and Igor Malik, Palo Alto, Calif. (US) | ||
| Assigned to Silicon Genesis Corporation, San Jose, Calif. (US) | ||
| Filed on Mar. 31, 2006, as Appl. No. 11/394,597. | ||
| Prior Publication US 2007/0232022 A1, Oct. 04, 2007 | ||
| Int. Cl. H01L 21/30 (2006.01); H01L 21/46 (2006.01) | ||
| U.S. Cl. 438—455 [438/406; 438/419; 257/E21.09; 257/E23.005] | 48 Claims |
| 1. A method for fabricating bonded substrate structures, the method comprising,
providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon
substrate, the second silicon substrate having a second surface region that is joined to a first surface region from the thickness
of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide
material between the thickness of single crystal silicon material and the second silicon substrate;
subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic
to a second characteristic, the second characteristic being free from the silicon oxide material and being an epitaxially
formed silicon material provided between the thickness of single crystal silicon material and the second silicon substrate;
and
maintaining the interface region free of multiple voids during the thermal process to form the epitaxially formed silicon
material to electrically couple the thickness of single crystal silicon material to the second silicon substrate,
the method further comprising performing a non-contact smoothing process on a cleaved surface of the thickness of single crystal
silicon.
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