| US 7,597,924 B2 | ||
| Surface modification of ePTFE and implants using the same | ||
| Alexey Kondyurin, Dresen (Germany); and Manfred Franz Maitz, Dresden (Germany) | ||
| Assigned to Boston Scientific Scimed, Inc., Maple Grove, Minn. (US) | ||
| Filed on Sep. 15, 2005, as Appl. No. 11/227,378. | ||
| Claims priority of provisional application 60/709257, filed on Aug. 18, 2005. | ||
| Prior Publication US 2007/0050007 A1, Mar. 01, 2007 | ||
| Int. Cl. B05D 3/06 (2006.01); A61L 33/00 (2006.01); H05H 1/00 (2006.01); A61L 2/00 (2006.01) | ||
| U.S. Cl. 427—2.1 [427/2.24; 427/2.25; 427/533; 427/535; 427/536; 623/1.43; 623/1.46] | 42 Claims |
| 1. A method for modifying an ePTFE surface, comprising:
providing an ePTFE material in a chamber suitable for plasma treatment;
providing a continuous low energy plasma discharge onto the ePTFE material;
applying high voltage pulses of short duration to form a high energy ion flux from the plasma discharge to generate ions which
form free radials on the surface of the ePTEE material;
dosing the ions onto the ePTFE material at about 1013 to about 1016 ions per cm2 of the surface of the ePTFE material; and
carburizing the ePTFE material to a depth of about 30 nm to about 500 nm to define a modified ePTFE surface without destroying
the node and fibril structure of the ePTFE material below the modified ePTFE surface.
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