US 7,592,672 B2
Grounding structure of semiconductor device including a conductive paste
Takeshi Wakabayashi, Sayama (Japan); Ichiro Mihara, Tachikawa (Japan); and Osamu Okada, Hamura (Japan)
Assigned to Casio Computer Co., Ltd., Tokyo (Japan)
Filed on Mar. 29, 2007, as Appl. No. 11/729,650.
Claims priority of application No. 2006-093178 (JP), filed on Mar. 30, 2006.
Prior Publication US 2007/0228468 A1, Oct. 04, 2007
Int. Cl. H01L 29/04 (2006.01)
U.S. Cl. 257—347  [257/E27.112; 257/E21.32] 14 Claims
OG exemplary drawing
 
1. A semiconductor device grounding structure comprising:
a circuit substrate having a plurality of connection pads and a grounding wiring;
a semiconductor device including a semiconductor substrate which has a first face and a second face opposite thereto, and a first side surface and a second side surface opposite thereto, wherein an insulating film is formed on the first face of the semiconductor substrate, an SOI integrated circuit including a plurality of connection pads is provided on the insulating film, and electrodes for external connection are connected to the connection pads of the SOI integrated circuit, respectively, the electrodes for external connection being connected to the connection pads of the circuit substrate, respectively, by a face-down bonding scheme;
an under-filling material provided between the semiconductor device and the circuit substrate; and
a conductive paste which connects the second face of the semiconductor substrate with the grounding wiring of the circuit substrate along only one of the first and second side surfaces of the semiconductor substrate; and
wherein the conductive paste is fixed to the second face of the semiconductor substrate, said one of the first and second side surfaces of the semiconductor substrate, and the grounding wiring of the circuit substrate.