| US 7,592,267 B2 | ||
| Method for manufacturing semiconductor silicon substrate and apparatus for manufacturing the same | ||
| Hiroyuki Ode, Tokyo (Japan) | ||
| Assigned to Elpida Memory Inc., Tokyo (Japan) | ||
| Filed on Nov. 16, 2006, as Appl. No. 11/600,105. | ||
| Claims priority of application No. 2005-340753 (JP), filed on Nov. 25, 2005. | ||
| Prior Publication US 2007/0120222 A1, May 31, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—762 [438/710; 438/778; 257/E21.174; 257/E21.224; 257/E21.228; 257/E21.252; 257/E21.585] | 12 Claims |
| 1. A method for manufacturing a semiconductor silicon substrate comprising:
a film forming step of forming an electrically conductive film, an insulating film and barrier film on a substrate in the
presence of carbon dioxide in the supercritical state under conditions of a temperature of from 150 to 350° C. and a pressure
of from 7.5 to 12 MPa; and at least one of:
a cleaning step of cleaning the substrate in a presence of carbon dioxide in a supercritical state under conditions of a temperature
of from 31 to 100° C. and a pressure of from 18 to 40 MPa;
an etching step of etching the substrate in the presence of carbon dioxide in the supercritical state under conditions of
a temperature of from 31 to 100° C. and a pressure of from 18 to 40 MPa; and
a resist removing step of removing a resist on the substrate in the presence of carbon dioxide in the supercritical state
under conditions of a temperature of from 31 to 80° C. and a pressure of from 18 to 40 MPa.
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