| US 7,592,234 B2 | ||
| Method for forming a nitrogen-containing gate insulating film | ||
| Takuo Ohashi, Tokyo (Japan); and Taishi Kubota, Tokyo (Japan) | ||
| Assigned to Elpida Memory, Inc., Tokyo (Japan) | ||
| Filed on Aug. 03, 2007, as Appl. No. 11/833,894. | ||
| Claims priority of application No. 2006-214402 (JP), filed on Aug. 07, 2006. | ||
| Prior Publication US 2008/0032509 A1, Feb. 07, 2008 | ||
| Int. Cl. H01L 21/76 (2006.01) | ||
| U.S. Cl. 438—400 [257/E21.293] | 13 Claims |
| 8. A method of manufacturing a semiconductor device, comprising:
forming a silicon oxide film over a semiconductor substrate by a first atomic layer deposition;
performing a nitriding treatment on the silicon oxide film to form a nitrogen-containing layer at a top portion of the silicon
oxide film;
forming a silicon nitride film on the nitrogen-containing layer by a second atomic layer deposition; and
repeating, a plurality of times, a cycle comprising the forming of the silicon oxide film, then performing the nitriding treatment
and the forming of the silicon nitride film.
|