	US 7,592,214 B2
	Method of manufacturing a semiconductor device including epitaxially growing semiconductor epitaxial layers on a surface of semiconductor substrate
Hiroyuki Ohta, Kawasaki (Japan)
Assigned to Fujitsu Microelectronics Limited, Tokyo (Japan)
Filed on May 02, 2007, as Appl. No. 11/797,253.
Claims priority of application No. 2006-290773 (JP), filed on Oct. 26, 2006.
Prior Publication US 2008/0099846 A1, May 01, 2008
Int. Cl. H01L 21/8238 (2006.01)

U.S. Cl. 438—199 [438/300; 257/E21.632]

9 Claims

1. A semiconductor device manufacture method comprising the steps of:

(a) forming a first active region of a first conductivity type and a second active region of a second conductivity type in a semiconductor substrate;

(b) forming first and second gate electrode structures on said first and second active regions, respectively;

(c) epitaxially growing semiconductor epitaxial layers of the first conductivity type on a surface of said semiconductor substrate in said first and second active regions on both sides of, and spaced by a predetermined distance from, said first and second gate electrode structures;

(d) executing ion implantation for forming source/drain regions at least in said second active region via said epitaxial layers;

(e) masking said second active region, removing portions of said semiconductor epitaxial layers on both sides of, and spaced by a predetermined distance from, said first gate electrode structure, and digging said first active region from a surface thereof to form recesses; and

(f) epitaxially growing semiconductor buried regions of the second conductivity type, said semiconductor buried regions burying said recesses and applying stress to a channel under said first gate electrode structure.