| US 7,592,122 B2 | ||
| Photoresist composition, and low-molecular compound and high-molecular compound for the photoresist composition | ||
| Toshiyuki Ogata, Kanagawa (Japan); Kotaro Endo, Kanagawa (Japan); Hiromitsu Tsuji, Kanagawa (Japan); Masaaki Yoshida, Kanagawa (Japan); Mitsuru Sato, Kanagawa (Japan); Syogo Matsumaru, Kanagawa (Japan); and Hideo Hada, Kanagawa (Japan) | ||
| Assigned to Tokyo Ohka Kogyo Co., Ltd., Kanagawa (Japan) | ||
| Appl. No. 10/553,315 PCT Filed Apr. 15, 2004, PCT No. PCT/JP2004/005410 § 371(c)(1), (2), (4) Date Oct. 17, 2005, PCT Pub. No. WO2004/097525, PCT Pub. Date Nov. 11, 2004. |
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| Claims priority of application No. 2003-124319 (JP), filed on Apr. 28, 2003; and application No. 2003-391139 (JP), filed on Nov. 20, 2003. | ||
| Prior Publication US 2006/0210913 A1, Sep. 21, 2006 | ||
| Int. Cl. G03F 7/004 (2006.01); C08C 19/28 (2006.01) | ||
| U.S. Cl. 430—270.1 [430/287.1; 430/326; 430/907; 525/359.3] | 6 Claims |
| 1. A photoresist composition comprising:
(A) a base resin component having alkali-solubility changed by the action of an acid; and (B) an acid generator for generating
an acid by irradiation with radiation rays, wherein the base resin component (A) comprises a compound having an alkali-soluble
site (i), at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type dissolution
inhibiting group, and the dissolution inhibiting group (ii) ) is a group represented by the following general formula (1):
—O—C(R1)(R2)—O—R3 (1)
wherein R1 and R2 independently represent a hydrogen atom or a lower alkyl group, and R3 is a group represented by the following general formula (2):
—[C(R5)(R6)]n—R4 (2)
wherein R4 is a halogen-containing norbornenyl group, R5 and R6 independently represent a hydrogen atom or a lower alkyl group, and n is 0 or an integer of 1 to 3, wherein the alkali-soluble
site (i) is at least one member selected from the group consisting of an alcoholic hydroxyl group and a hydroxyl group of
a carboxyl group.
|