| US 7,585,722 B2 | ||
| Integrated circuit comb capacitor | ||
| Daniel C. Edelstein, White Plains, N.Y. (US); Anil K. Chinthakindi, Wappingers Falls, N.Y. (US); Timothy J. Dalton, Ridgefield, Conn. (US); Ebenezer E. Eshun, Newburgh, N.Y. (US); Jeffrey P. Gambino, Westford, Vt. (US); Sarah L. Lane, Wappingers Falls, N.Y. (US); and Anthony K. Stamper, Williston, Vt. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jan. 10, 2006, as Appl. No. 11/306,746. | ||
| Prior Publication US 2007/0158717 A1, Jul. 12, 2007 | ||
| Int. Cl. H01L 29/00 (2006.01) | ||
| U.S. Cl. 438—239 [438/393] | 22 Claims |
| 1. A method for creating a capacitor, comprising the steps of:
depositing a low-k dielectric;
forming a plurality of openings with same pitch in said low-k dielectric at a same metal wiring level, at least one opening
a non-capacitor opening and at least one opening a capacitor opening;
protecting any non-capacitor opening from dielectric constant modification;
creating a porous region along surfaces of said at least one capacitor opening;
expanding said at least one capacitor opening by selectively removing said modified dielectric along said surfaces of said
at least one capacitor opening; and,
filling said non-capacitor opening and said expanded capacitor opening with a conductive material.
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