US 7,577,404 B2
High-frequency device, high-frequency module and communications device comprising them
Kenji Hayashi, Kumagaya (Japan)
Assigned to Hitachi Metals, Ltd., Tokyo (Japan)
Filed on Jun. 19, 2006, as Appl. No. 11/425,048.
Application 11/425048 is a division of application No. 10/662386, filed on Sep. 16, 2003, granted, now 7,076,216.
Claims priority of application No. 2002-269855 (JP), filed on Sep. 17, 2002; and application No. 2002-310874 (JP), filed on Oct. 25, 2002.
Prior Publication US 2006/0223368 A1, Oct. 05, 2006
This patent is subject to a terminal disclaimer.
Int. Cl. H04B 1/44 (2006.01)
U.S. Cl. 455—78  [455/73; 455/76; 455/83; 455/561; 455/562.1] 19 Claims
OG exemplary drawing
 
1. A high-frequency device comprising a circuit for switching connection to an antenna side circuit and a predetermined transmitting system circuit or receiving system circuit and a high-frequency amplifying circuit connected to said switch circuit,
wherein a phase relation between said switch circuit and said high-frequency amplifying circuit is in a state corresponding to a conjugate matching in a fundamental frequency band, while it is in a state corresponding to a nonconjugate matching in n-th frequency bands, wherein n is an integer of 2 or more, and
wherein a phase adjustment is carried out so that a phase of an impedance Z2 in said n-th frequency bands of said switch circuit when viewed from a connection reference plane between said switch circuit and said high-frequency amplifying circuit is within θ0±120°, wherein θ0(θ1±1800: a position symmetrical with respect to a center on a Smith chart) is a phase opposite to a phase θ1 by 180°, and θ1 (−θ) is conjugate to a phase θ of an impedance Z1 in said n-th frequency bands of said high-frequency amplifying circuit when viewed from said connection reference plane.