| US 7,576,374 B2 | ||
| Semiconductor device with robust polysilicon fuse | ||
| Yuan-Pang Lee, Miaoli (Taiwan); Chen-Shiang Shieh, Hsinchu (Taiwan); Ping-Hung Yin, Taipei (Taiwan); Fei-Yun Chen, Hsinchu (Taiwan); and Yuan-Ko Hwang, Hualien (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Hsin-Chu (Taiwan) | ||
| Filed on Jun. 26, 2006, as Appl. No. 11/475,341. | ||
| Application 11/475341 is a division of application No. 10/438681, filed on May 15, 2003, granted, now 7,083,897. | ||
| Prior Publication US 2006/0240363 A1, Oct. 26, 2006 | ||
| Int. Cl. H01L 29/00 (2006.01) | ||
| U.S. Cl. 257—209 [257/529; 257/665] | 11 Claims |
| 1. A semiconductor structure containing a silicon containing fuse, comprising:
a substrate with a silicon containing fuse over a surface thereof, at least one layer of semiconductor material disposed over
said substrate thereby including said at least one silicon containing fuse;
a fuse opening extending through said at least one layer of semiconductor material; and
a layer of native oxide comprising a first and a second layer of native oxide formed on exposed surfaces including said surface
of said silicon containing fuse.
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