| US 7,576,362 B2 | ||
| Semiconductor device having EL element, integrated circuit and adhesive layer therebetween | ||
| Toru Takayama, Kanagawa (Japan); Junya Maruyama, Kanagawa (Japan); and Yumiko Ohno, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Mar. 09, 2004, as Appl. No. 10/795,445. | ||
| Claims priority of application No. 2003-069742 (JP), filed on Mar. 14, 2003. | ||
| Prior Publication US 2004/0238827 A1, Dec. 02, 2004 | ||
| Int. Cl. H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2006.01) | ||
| U.S. Cl. 257—79 [257/83; 257/257; 257/290; 257/368; 257/E29.273] | 18 Claims |
| 1. A semiconductor device comprising:
a first plastic substrate;
a first insulating film formed over the first plastic substrate;
an EL element formed over the first insulating film;
a second plastic substrate;
a second insulating film formed below the second plastic substrate;
a semiconductor integrated circuit formed below the second insulating film and formed over the EL element;
a first adhesive layer between the EL element and the semiconductor integrated circuit;
a second adhesive layer between the first insulating film and the first plastic substrate; and
a third adhesive layer between the second insulating film and the second plastic substrate,
wherein a first terminal electrode of the semiconductor integrated circuit is electrically connected to a second terminal
electrode over the first plastic substrate through conductive particles.
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