| US 7,575,993 B2 | ||
| Method of manufacturing semiconductor device and display device | ||
| Shunpei Yamazaki, Tokyo (Japan); Toru Takayama, Kanagawa (Japan); and Tetsuji Yamaguchi, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on Mar. 16, 2007, as Appl. No. 11/724,929. | ||
| Application 11/724929 is a continuation of application No. 10/845422, filed on May 13, 2004, granted, now 7,192,859. | ||
| Claims priority of application No. 2003-139680 (JP), filed on May 16, 2003. | ||
| Prior Publication US 2007/0178687 A1, Aug. 02, 2007 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—597 [257/E21.507; 257/E21.588; 257/E21.627; 257/E21.641] | 23 Claims |
| 1. A method of manufacturing a semiconductor device comprising of:
forming a semiconductor layer over a substrate;
forming an insulating film over the semiconductor layer;
forming an opening in the insulating film over the semiconductor layer;
dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate;
forming a wiring containing the conductive composition at least in the opening; and
performing a heat treatment,
wherein a shape of the wiring changes during the heat treatment,
wherein the wiring moves to a bottom portion of the opening during the heat treatment, and
wherein the wiring is electrically connected to the semiconductor layer.
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