| US 7,575,985 B2 | ||
| Method of fabricating semiconductor device | ||
| Shunpei Yamazaki, Tokyo (Japan); Tamae Takano, Kanagawa (Japan); and Koji Dairiki, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on Nov. 20, 2006, as Appl. No. 11/601,699. | ||
| Application 11/601699 is a division of application No. 10/882634, filed on Jul. 02, 2004, granted, now 7,141,490. | ||
| Application 10/882634 is a division of application No. 10/001785, filed on Dec. 05, 2001, granted, now 6,759,313. | ||
| Claims priority of application No. 2000-370724 (JP), filed on Dec. 05, 2000; application No. 2000-370787 (JP), filed on Dec. 05, 2000; application No. 2000-370794 (JP), filed on Dec. 05, 2000; and application No. 2000-403513 (JP), filed on Dec. 28, 2000. | ||
| Prior Publication US 2007/0148922 A1, Jun. 28, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/336 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01) | ||
| U.S. Cl. 438—486 [438/487; 438/166; 438/308] | 19 Claims |
| 1. A method of manufacturing a semiconductor device comprising:
forming a semiconductor film;
doping the semiconductor film with an impurity of one conductivity type to form a semiconductor region of one conductivity
type; and
activating the semiconductor region of the one conductivity type by irradiating the semiconductor region several times from
a pulsed light by controlling a light source,
wherein the light source is controlled by a temperature sensor during the irradiating, and
wherein at least one selected from the group consisting of a halogen lamp, a metal halide lamp, a xenon arc lamp and a reduced
pressure mercury lamp is used as the light source.
|