| US 7,572,683 B2 | ||
| Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices | ||
| Manabu Takei, Nagano (Japan); Tatsuya Naito, Nagano (Japan); and Michio Nemoto, Nagano (Japan) | ||
| Assigned to Fuji Electric Device Technology Co., Ltd., (Japan) | ||
| Filed on Nov. 09, 2006, as Appl. No. 11/558,065. | ||
| Application 11/558065 is a division of application No. 10/928927, filed on Aug. 27, 2004, granted, now 7,157,785. | ||
| Claims priority of application No. 2003-209709 (JP), filed on Aug. 29, 2003. | ||
| Prior Publication US 2007/0072359 A1, Mar. 29, 2007 | ||
| Int. Cl. H01L 21/331 (2006.01) | ||
| U.S. Cl. 438—140 [257/E21.383] | 2 Claims |
| 1. A method of manufacturing the semiconductor device including a semiconductor substrate, an n-type drift region in the semiconductor
substrate, p-type base regions formed selectively in the surface portion of the drift region, one or more n-type emitter regions
in the surface portion of each of the base regions, a gate electrode over a part of each of the base regions and a part of
the one or more emitter regions, with a gate insulation film interposed beneath the gate electrode, an emitter electrode in
contact with the base regions and the emitter regions, second p-type semiconductor regions in the surface portion of the drift
region, the second p-type semiconductor regions being shaped as islands arranged as a ring surrounding the base regions, a
p-type collector region on the back surface of the drift region, a p-type separation region in contact with the side faces
of the collector region and the side faces of the drift region, and a collector electrode on the collector region, the method
comprising:
extending the drift region between the base regions;
implanting boron ions at a dose amount between 1×1011 cm−2 and 1×1014 cm−2 into portions of the drift region that extend between the base regions to form first p-type semiconductor regions and into
portions of the drift region that extend between the island-shaped second p-type semiconductor regions, thereby forming third
p-type semiconductor regions;
making the first p-type semiconductor regions and the emitter electrode contact each other; and
making the second p-type semiconductor regions and the third p-type semiconductor regions contact the peripheral portion of
the emitter electrode simultaneously with making the first p-type semiconductor regions and the emitter electrode contact
each other.
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