| US 7,572,674 B2 | ||
| Method for manufacturing semiconductor device | ||
| Kouta Nagano, Tsuchiura (Japan); Hideo Miura, Tsuchiura (Japan); and Akihiro Yaguchi, Tsuchiura (Japan) | ||
| Assigned to Renesas Technology Corp., Tokyo (Japan) | ||
| Appl. No. 10/519,175 PCT Filed Sep. 26, 2002, PCT No. PCT/JP02/09975 § 371(c)(1), (2), (4) Date Dec. 20, 2004, PCT Pub. No. WO2004/030075, PCT Pub. Date Apr. 08, 2004. |
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| Prior Publication US 2005/0227384 A1, Oct. 13, 2005 | ||
| Int. Cl. H01L 21/48 (2006.01); H01L 23/495 (2006.01) | ||
| U.S. Cl. 438—114 [257/673] | 8 Claims |
| 1. A method of making a semiconductor device to be soldered with an Sn—Ag—Cu type solder to a substrate, the method comprising:
(a) sealing the semiconductor device in a package by surrounding it with thermosetting epoxy resin and thermally curing the
resin at a first temperature;
(b) baking the thermosetting epoxy resin at a second temperature not higher than the first temperature;
(c) further baking the thermosetting epoxy resin at a third temperature higher than the first temperature, wherein the third
temperature is between about 220° C. and about 260° C.; and
(d) inspecting the semiconductor device.
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