| US 7,572,533 B2 | ||
| Flat panel direct methanol fuel cell and method of making the same | ||
| Yung-Yi Liu, Taipei Hsien (Taiwan); Shi-Shyan James Shang, Taoyuan (Taiwan); Hsi-Ming Shu, Taipei Hsien (Taiwan); Tsang-Ming Chang, Taipei (Taiwan); and Feng-Yi Deng, Taipei (Taiwan) | ||
| Assigned to Nan Ya Printed Circuit Board Corporation, Luchu, Taoyuan (Taiwan); and Antig Technology Co., Ltd., Taipei (Taiwan) | ||
| Filed on Apr. 15, 2007, as Appl. No. 11/735,483. | ||
| Application 11/735483 is a division of application No. 10/709921, filed on Jun. 06, 2004, granted, now 7,220,507. | ||
| Claims priority of application No. 93108441 A (TW), filed on Mar. 26, 2004. | ||
| Prior Publication US 2007/0184968 A1, Aug. 09, 2007 | ||
| Int. Cl. H01M 8/02 (2006.01); H01M 8/10 (2006.01) | ||
| U.S. Cl. 429—32 [429/36] | 6 Claims |
| 1. A method for fabricating an integrated cathode electrode sheet of a flat-panel direct methanol fuel cell, the method comprising:
(1) providing a CCL (copper clad laminate) substrate comprising a base layer, a first copper layer laminated on an upper surface
of the base layer, and a second copper layer laminated on a lower surface of the base layer;
(2) drilling the CCL substrate within pre-selected electrode areas to form a plurality of apertures through the first copper
layer, the base layer and the second copper layer;
(3) chemically depositing a third copper layer on both surfaces of the CCL substrate and interior sidewalls of inside the
apertures;
(4) forming a patterned resist layer on the CCL substrate to expose the pre-selected electrode areas;
(5) using the patterned resist layer as a plating mask, performing an electroplating process to electroplate a fourth copper
layer within the expose the pre-selected electrode areas and area not covered by the patterned resist layer, and then electroplating
a Sn/Pb layer on the fourth copper layer;
(6) stripping the patterned resist layer;
(7) performing a copper etching process to etch away the third copper layer and the first and second copper layer that are
not covered by the Sn/Pb layer; and
(8) removing the Sn/Pb layer to expose the fourth copper layer.
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