| US 7,571,533 B2 | ||
| Method of manufacturing a micro flux gate sensor | ||
| Kyoung-won Na, Seoul (Korea, Republic of); and Jingli Yuan, Yongin-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-Si (Korea, Republic of) | ||
| Filed on Apr. 21, 2006, as Appl. No. 11/408,047. | ||
| Claims priority of application No. 10-2005-0110949 (KR), filed on Nov. 18, 2005. | ||
| Prior Publication US 2007/0115585 A1, May 24, 2007 | ||
| Int. Cl. G01R 3/00 (2006.01) | ||
| U.S. Cl. 29—595 [29/602.1; 29/605; 29/606; 205/119; 205/122; 216/22; 216/39; 216/41; 216/48; 310/179; 310/208; 336/176; 336/200; 336/229] | 7 Claims |
| 1. A method of manufacturing a micro flux gate sensor, comprising:
(a) forming at least one lower coil portion of at least one of an excitation coil and a magnetic field detecting coil on a
wafer;
(b) forming at least one connection portion with a certain height at a predetermined position on the lower coil portion;
(c) forming a first insulation layer to cover the lower coil portion and the connection portion;
(d) forming at least one magnetic core on the first insulation layer;
(e) forming a second insulation layer to cover the magnetic core and forming at least one upper coil portion electrically
connected to the connection portion to form the excitation coil and the magnetic field detecting coil; and
(f) forming a third insulation layer to cover the upper coil portion.
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