| US 7,567,606 B2 | ||
| Strong distributed feedback semiconductor laser | ||
| Mathieu Carras, Gentilly (France); and Alfredo De Rossi, Paris (France) | ||
| Assigned to Thales, (France) | ||
| Filed on May 09, 2008, as Appl. No. 12/117,780. | ||
| Claims priority of application No. 07 03389 (FR), filed on May 11, 2007. | ||
| Prior Publication US 2008/0279233 A1, Nov. 13, 2008 | ||
| Int. Cl. H01S 5/00 (2006.01) | ||
| U.S. Cl. 372—50.11 [372/50.1] | 10 Claims |
| 1. Semiconductor laser comprising:
a substrate providing the mechanical support function,
an active area having a first intrinsic refractive index and an effective refractive index, in which a light wave is propagated
with a wavelength λ designed for lasing,
a top waveguide having a second intrinsic refractive index and a thickness, and, on the surface, a grating structure at least
partially covered by a layer of material, the dielectric permittivity of which presents a negative real part, such as, for
example, metal, said grating having a period and a depth,
a bottom waveguide having a third intrinsic refractive index, wherein:
the depth of said grating is between approximately
  so as to introduce a modulation of the effective index of the active area making it possible to obtain a stable and controlled
feedback.
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