| US 7,567,477 B2 | ||
| Bias sensing in sense amplifiers through a voltage-coupling/decoupling device | ||
| David J McElroy, Owens Crossroads, Ala. (US); and Stephen L Casper, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Jun. 13, 2006, as Appl. No. 11/452,783. | ||
| Application 11/452783 is a division of application No. 10/874995, filed on Jun. 23, 2004, granted, now 7,072,235. | ||
| Application 10/874995 is a continuation of application No. 10/233871, filed on Aug. 29, 2002, granted, now 6,757,202. | ||
| Prior Publication US 2006/0280011 A1, Dec. 14, 2006 | ||
| Int. Cl. G11C 7/00 (2006.01) | ||
| U.S. Cl. 365—222 [365/190; 365/205; 365/208; 365/207; 365/189.09; 365/227; 365/228; 365/204; 365/210.11; 365/210.12] | 10 Claims |
| 1. A memory device comprising:
a memory cell;
a sense amplifier coupled to first and second sensing nodes;
a digit line coupled to said memory cell and to said first sensing node; and
a voltage coupling/decoupling device having an output coupled to said first sensing node wherein said voltage device couples
voltage onto said first sensing node after said memory cell is accessed and before said sense amplifier is fired, and wherein
voltage on said second sensing node remains substantially constant during said coupling.
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