| US 7,567,022 B2 | ||
| Method for forming perovskite type oxide thin film, piezoelectric element, liquid discharge head, and liquid discharge apparatus | ||
| Tetsuro Fukui, Yokohama (Japan); Kenichi Takeda, Yokohama (Japan); Takanori Matsuda, Chofu (Japan); Hiroshi Funakubo, Yokohama (Japan); and Shintaro Yokoyama, Yokohama (Japan) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan); and Tokyo Institute of Technology, Tokyo (Japan) | ||
| Filed on Oct. 18, 2006, as Appl. No. 11/582,403. | ||
| Claims priority of application No. 2005-305815 (JP), filed on Oct. 20, 2005. | ||
| Prior Publication US 2007/0090730 A1, Apr. 26, 2007 | ||
| Int. Cl. H01L 41/00 (2006.01); H01L 41/187 (2006.01) | ||
| U.S. Cl. 310—358 [252/62.9 PZ] | 6 Claims |
| 1. A film forming method for forming a perovskite type oxide thin film having a plurality of elements constituting at least
one of A site and B site on a substrate, wherein
the perovskite oxide is expressed by the following chemical formula (1), that is, (A1x, A2y, A3z (B1j, B2k, B3l, B4m, B5n)O3. . . (1) (where, element A1 shows Pb and elements A2 and A3 are different from each other and respectively show any one of Bi, Ba, Sr, Ca, and La; elements B1, B2, B3, B4, and B5 are
different from each other and show any one of Nb, Yb, Mg, Zn, Sc, Ta, Ti, Zr, In and Ni; x, y and z are real numbers between
0 and 1 (inclusive) satisfying the relation expressed by x+y+z≧1.0; and j, k, l, m and n are real numbers between 0 and 1
(inclusive) satisfying the relation expressed by j+k+l+m+n=1),
a plurality of steps of supplying materials containing the elements onto the substrate are included, and
the A1, A2, A3, B1, B2, B3, B4, and B5 are divided into a plurality of groups and each material containing elements included
in each of the groups is supplied onto the substrate in a separate step.
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